(China (Mainland))
Product Summary
The EDI88130CS20TB is a Monolithic SRAM. An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple pages of memory are required. The EDI88130CS20TB has eight bi-directional input-output lines to provide simultaneous access to all bits in a word.
Parametrics
EDI88130CS20TB absolute maximum ratings: (1)Voltage on any pin relative to VSS : -0.2 to 7.0 V; (2)Operating Temperature TA (Ambient) Industrial : -40 to +85 ℃; (3)Military : -55 to +125 ℃; (4)Storage Temperature, Ceramic : -65 to +150 ℃; (5)Power Dissipation : 1.7 W; (6)Output Current : 40 mA; (7)Junction Temperature, TJ : 175 ℃.
Features
EDI88130CS20TB features: (1)Access Times of 15, 17, 20, 25, 35, 45, 55ns; (2)Battery Back-up Operation 2V Data Retention (EDI88130LPS); (3)CS1#, CS2 & OE# Functions for Bus Control; (4)Inputs and Outputs Directly TTL Compatible; (5)Organized as 128Kx8; (6)Commercial, Industrial and Military Temperature Ranges; (7)Single +5V (±10%) Supply OperationThe EDI88130CS is a high speed, high performance, 128Kx8 bits monolithic Static RAM.
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