(China (Mainland))
Product Summary
The IDT71256L35L32M is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power consumption of only 350mW (typ.). The IDT71256L35L32M also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a low-power standby mode as long as CS remains HIGH. In the full standby mode, the low-power device consumes less than 15mW, typically. This capability provides significant system level power and cooling savings.
Parametrics
IDT71256L35L32M absolute maximum ratings: (1)Terminal voltage with respect to GND, VTERM: -0.5 to +7.0 V; (2)Operating temperature, TA: 0 to +70℃ to -55 to +125℃; (3)Temperature under bias, TBIAS: -55 to +125℃ to -65 to +135℃; (4)Storage temperature, TSTG: -55 to +125℃ to -65 to +150℃; (5)Power dissipation, PT: 0.5W; (6)DC output current, IOUT: 50mA.
Features
IDT71256L35L32M features: (1)High-speed address/chip select time: Military: 25/30/35/45/55/70/85/100/120/150ns (max.); Commercial: 20/25/35/45ns (max.) Low Power only; (2)Low-power operation; (3)Battery Backup operation 2V data retention; (4)Produced with advanced high-performance CMOS technology; (5)Input and output directly TTL-compatible; (6)Available in standard 28-pin (300 or 600 mil) ceramic DIP, 28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ and 32-pin LCC; (7)Military product compliant to MIL-STD-883, Class B.
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